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| PD - 94019A HEXFET(R) POWER MOSFET THRU-HOLE (TO-257AA) IRF5YZ48CM 55V, N-CHANNEL Product Summary Part Number IRF5YZ48CM BVDSS 55V RDS(on) 0.029 ID 18A* Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 18* 72 75 0.6 20 160 18 7.5 3.5 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 5/17/01 IRF5YZ48CM Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 55 -- -- 2.0 22 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.055 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.029 4.0 -- 25 250 100 -100 92 16 34 18 78 55 63 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 18A VDS = VGS, ID = 250A VDS = 25V, IDS = 18A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 44V VDD = 28V, ID = 18A, VGS =10V, RG = 5.1 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1900 620 270 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 18* 72 1.3 104 210 Test Conditions A V ns nC Tj = 25C, IS = 18A, VGS = 0V Tj = 25C, IF = 18A, di/dt 100A/s VDD 30V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 1.67 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5YZ48CM 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 10 10 4.5V 1 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 18A I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 1.0 0.5 10 4.0 15 V DS = 25V 20s PULSE WIDTH 6.0 5.0 7.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5YZ48CM 3500 3000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 18A 16 VDS = 44V VDS = 27V VDS = 11V C, Capacitance (pF) 2500 Ciss 2000 12 1500 C oss 8 1000 500 C rss 4 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) TJ = 150 C 10 TJ = 25 C ID , Drain-to-Source Current (A) 100 10 1ms Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 100 1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 10ms VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5YZ48CM 50 LIMITED BY PACKAGE VGS 40 VDS RD D.U.T. + I D , Drain Current (A) RG -VDD 30 VGS Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1 PDM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5YZ48CM 350 EAS , Single Pulse Avalanche Energy (mJ) 15V 300 250 ID 8.0A 11.4A BOTTOM 18A TOP VDS L D R IV E R 200 RG 20V VGS D .U .T. IA S tp + - VD D 150 A 0 .01 100 50 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5YZ48CM Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 1.0mH Peak IAS = 18A, RG= 25 ISD 18A, di/dt 213 A/s, Pulse width 400 s; Duty Cycle 2% VDD 55V, TJ 150C Case Outline and Dimensions -- TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/01 www.irf.com 7 |
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